Carbon nanotube interconnects in porous diamond interlayer...

Details Carbon nanotube interconnects in porous diamond interlayer... Carbon nanotube interconnects in porous diamond interlayer...

2008-04-29

2008-04-29

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S778000

Reexamination Certificate

active

11026315

ABSTRACT:
A method and structure for using porous diamond interlayer dielectrics (ILDs) in conjunction with carbon nanotube interconnects is herein described. A diamond ILD is deposited on an underlaying layer. The diamond layer is optionally and selectively removed of non-sp3 bond to create a porous diamond film. Trenches and vias are etched in the porous diamond ILD. Carbon nanotubes are deposited on the diamond ILD filling the trenches using a liquid crystal host-carbon nanotube solution. Using methods of nematic liquid crystal alignment, the carbon nanotubes are aligned under the influence of the liquid crystals. At least some of the liquid crystal solution is removed leaving an aligned carbon nanotubes.

REFERENCES:
patent: 6548313 (2003-04-01), Ravi et al.
patent: 2005/0227079 (2005-10-01), Ravi
patent: 2005/0277303 (2005-12-01), Ravi et al.
patent: 2006/0276030 (2006-12-01), Wang et al.

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