Carbon nanotube growth

Details Carbon nanotube growth Carbon nanotube growth

2007-02-27

2007-02-27

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C977S843000

Reexamination Certificate

active

10285311

ABSTRACT:
Patterned growth of arrays of SWNTs is achieved at the full-wafer scale. According to an example embodiment of the present invention, the chemistry of CH4CVD has been discovered to be sensitive to the concentration of H2, leading to three regimes of growth conditions. The three regimes are identified for particular growth conditions and a regime that facilitates carbon nanotube growth while inhibiting pyrolysis is identified and used during CVD growth of the nanotubes. This approach is also useful for CVD synthesis of other nanomaterials. In this manner, patterned growth of carbon nanotubes is facilitated while inhibiting undesirable conditions, making nanotube orientation control and device integration possible on a large scale.

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