Carbon nanotube field effect transistor and methods for...

Details Carbon nanotube field effect transistor and methods for... Carbon nanotube field effect transistor and methods for...

2005-11-29

2008-11-18

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S300000, C257SE21621, C977S842000, C977S938000

Reexamination Certificate

active

07452759

ABSTRACT:
A structure and fabrication process for a carbon nanotube field effect transistor is disclosed herein. In one embodiment, a method for forming a carbon nanotube transistor starts with a substrate comprised of a bottom dielectric, a carbon nanotube layer, and a top dielectric. A pillar is formed on the top dielectric, and a sidewall gate is formed on a sidewall of the pillar. A source is formed proximate to an outer edge of the gate and in contact with the carbon nanotube layer. The pillar is then removed, the source area masked, and a drain is formed proximate to an inner edge of the gate and in contact with the carbon nanotube layer. The source and drain are self aligned to the gate as dictated by the placement of dielectric spacers on the inner and outer edges of the gate.

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