Carbon nanotube energy well (CNEW) field effect transistor

Details Carbon nanotube energy well (CNEW) field effect transistor Carbon nanotube energy well (CNEW) field effect transistor

2008-09-23

2008-09-23

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S284000, C257S401000, C257SE21177, C257SE51038, C977S762000

Reexamination Certificate

active

11638333

ABSTRACT:
A structure to form an energy well within a Carbon nanotube is described. The structure includes a doped semiconductor region and an undoped semiconductor region. The Carbon nanotube is between the doped semiconductor region and the undoped semiconductor region. The structure also includes a delta doped semiconductor region. The undoped semiconductor region is between the Carbon nanotube and the delta doped region. The delta doped semiconductor region is doped opposite that of the doped semiconductor region.

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