Carbon nanotube bond pad structure and method therefor

Details Carbon nanotube bond pad structure and method therefor Carbon nanotube bond pad structure and method therefor

2011-01-18

2011-01-18

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257SE23165, C977S742000, C977S932000

Reexamination Certificate

active

07872352

ABSTRACT:
A bond pad structure (300) for an integrated circuit (IC) device uses carbon nanotubes to increase the strength and resilience of wire bonds (360). In an example embodiment there is, a bond pad structure (300) on an IC substrate, the bond pad structure comprises, a first conductive layer (310) having a top surface and a bottom surface, the bottom surface attached to the IC substrate. A dielectric layer (320) is deposited on the top surface of the first conductive layer (310), the dielectric layer having an array of vias (325), the array of vias filled with a carbon nanotube material (325), the carbon nanotube material (325) is electrically coupled to the first conductive layer (310). There is a second conductive layer (330) having a top surface and a bottom surface, the bottom surface of the second conductive layer is electrically coupled to the carbon nanotube material (325). A feature of this embodiment may include the first (410,510) or second (430, 530) conductive layer being comprised of carbon nanotube material, as well.

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