Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2008-07-22
2011-12-20
Sarkar, Asok (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257SE23101, C257SE23105, C257S706000, C257S778000, C438S108000, C438S122000, C438S125000, C977S742000, C977S762000
Reexamination Certificate
active
08080871
ABSTRACT:
One aspect of the invention includes a copper substrate; a catalyst on top of the copper substrate surface; and a thermal interface material that comprises a layer containing carbon nanotubes that contacts the catalyst. The carbon nanotubes are oriented substantially perpendicular to the surface of the copper substrate. A Raman spectrum of the layer containing carbon nanotubes has a D peak at ˜1350 cm−1with an intensity ID, a G peak at ˜1585 cm−1with an intensity IG, and an intensity ratio ID/IGof less than 0.7 at a laser excitation wavelength of 514 nm. The thermal interface material has: a bulk thermal resistance, a contact resistance at an interface between the thermal interface material and the copper substrate, and a contact resistance at an interface between the thermal interface material and a solid-state device. A summation of these resistances has a value of 0.06 cm2K/W or less.
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Boren Arthur
Dangelo Carlos
Dey Subrata
Olsen Darin
Padmakumar Bala
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Sarkar Asok
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