Carbon-free hydrogen silsesquioxane with dielectric constant les

Details Carbon-free hydrogen silsesquioxane with dielectric constant les Carbon-free hydrogen silsesquioxane with dielectric constant les

1994-11-28

1996-06-25

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257642, H01L 23485, H01L 23532

Patent

active

055302939

ABSTRACT:
An insulator for covering an interconnection wiring level in a surface thereof on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer and annealing is provided. The annealing is carried out in the presence of hydrogen and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2. Also provided is electrical insulation between neighboring devices using the flowable oxide which is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.

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Wolf et al., Silicon Processing for the VLSI Era, vol. 1, Process Technology, Lattice Press, Sunset Beach, CA, pp. 220-223.
Pramanik et al., "Reliability of Multilevel Circuits Using Hydrogen Silsesquioxane FO.sub.x for Interlevel Dielectric Planarization", Jun. 8-9, 1993 VMIC Conference, 1993 ISMIC-102/93/0329, pp. 329-331.
Ballance et al., "Low Temperature Reflow Planarization Using a Novel Spin-on Interlevel Dielectric", Dow Corning Corporation, Fremont, CA, VMIC Conference, Jun. 9, 1992.

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