Carbon enhanced vapor etching

Details Carbon enhanced vapor etching Carbon enhanced vapor etching

1988-09-23

1990-02-27

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156904, 252 791, 252 793, B44C 122, C03C 1500, C03C 2506

Patent

active

049043382

ABSTRACT:
A carbon enhanced vapor etching process which eliminates resist development, avoids contact with wet chemicals and plasma, and employs simple universally available process equipment. The process is based on the discovery that the etch rate of silicon dioxide in hydrogen fluoride is greatly enhanced in the presence of carbon. Carbon is provided by an organic or inorganic material deposited on or in the surface of the silicon.

REFERENCES:
patent: 4053350 (1977-10-01), Olsen et al.
patent: 4450041 (1984-05-01), Aklufi
patent: 4620898 (1986-11-01), Banks et al.
patent: 4749440 (1988-06-01), Blackwood et al.

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