Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2006-09-19
2006-09-19
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C438S020000, C313S310000, C313S336000, C445S050000, C445S051000, C977S939000, C257SE29022
Reexamination Certificate
active
07109515
ABSTRACT:
Systems and methods are described for carbon containing tips with cylindrically symmetrical carbon containing expanded bases. A method includes producing an expanded based carbon containing tip including: fabricating a carbon containing expanded base on a substrate; and then fabricating a carbon containing fiber on the expanded base. An apparatus includes a carbon containing expanded base coupled to a substrate; and a carbon containing extension coupled to said carbon containing expanded base. The carbon containing expanded base is substantially cylindrically symmetrical and said carbon containing extension is substantially cylindrically symmetrical.
REFERENCES:
patent: 4513308 (1985-04-01), Greene et al.
patent: 5038070 (1991-08-01), Bardai et al.
patent: 5804910 (1998-09-01), Tjaden et al.
patent: 5834885 (1998-11-01), Itoh et al.
patent: 5872422 (1999-02-01), Xu et al.
patent: 6020677 (2000-02-01), Blanchet-Fincher et al.
patent: 6031322 (2000-02-01), Takemura et al.
patent: 6062931 (2000-05-01), Chuang et al.
patent: 6239547 (2001-05-01), Uemura et al.
patent: 6339281 (2002-01-01), Lee et al.
patent: 6417606 (2002-07-01), Nakammoto et al.
patent: 6465132 (2002-10-01), Jin
patent: 6465941 (2002-10-01), Kubota et al.
patent: RE38223 (2003-08-01), Keesmann et al.
patent: 6649431 (2003-11-01), Merkulov et al.
patent: 6861790 (2005-03-01), Iwasa et al.
patent: 2001/0015605 (2001-08-01), Yoshiki
patent: 2001/0024078 (2001-09-01), Dimitrijevic et al.
PCT International Search Report Date Mailed Sep. 17, 2002.
Synthesis of Large Arrays of Well-Aligned Carbon Nanotubes on Glassby Z.F. Ren, et al. SCIENCE Vo. 282, Nov. 6, 1998.
Variations in Structure and Emission Characteristics of Nanostructured Carbon Films Prepared by HFCVD Method Due to the Addition of Ammonia in Source Gases,by Seungho Choi, et al. Dept. of Molecular Science and Technology, Ajou University, Suwon 442-749 Korea. 2001 IEEE.
Baker, “Catalytic growth of carbon filaments,”Carbon,27:315-323, 1989.
Merkulov et al., “Patterned growth of individual and multiple vertically aligned carbon nanofibers,”Applied Physics Letters,76:3555-3557, 2000.
Ren et al., “Growth of a single freestanding multiwall carbon nanotube on each nanonickel dot,”Applied Physics Letters,75:1086-1088, 1999.
Ren et al., “Synthesis of large arrays of well-aligned carbon nanotubes on glass,”Science,282:1105-1107, 1998.
Guillorn, et al., “Operation of a gated field emitter using an individual carbon nanofiber cathode,” Applied Physics Letters, vol. 79, No. 21, pp. 3506-3508, Nov. 19, 2001.
Baylor, et al., “Field emission from isolated individual vertically aligned carbon nanocones” Journal of Applied Physics, vol. 91, No. 7, pp. 4602-4606, Apr. 1, 2002.
Saito et al., “Field Emission Patterns from Single-Walled Carbon Nanotubes,” Japan Journal Applied Physics, vol. 36, pp. 1340-1342, Oct. 1, 1997.
Matsumoto, et al., “Ultralow biased field emitter using single-wall carbon nanotube directly grown onto silicon tip by thermal chemical vapor deposition,” Applied Physics Letters, vol. 78, No. 4, pp. 539-540, Jan. 22, 2001.
Guillorn, et al., “Fabrication of gated cathode structures using anin situgrown vertically aligned carbon nanofiber as a field emission element”, Journal of Vacuum Science, pp. 573-578, Mar./Apr. 2001.
Rinzler, et al., “Unraveling Nanotubes: Field Emission from an Atomic Wire” available at wwww.jstor.org, pp. 1550-1553, May 9, 2002.
Merkulov, et al., “Patterned growth of individual and multiple vertically aligned carbon nanofibers,” Applied Physics Letters, vol. 76, No. 24, pp. 3555-3557, Jun. 12, 2000.
Xueping, et al., “A method for fabricating large-area, patterned, carbon nanotube field emitters,” Applied Physics Letters, vol. 74, No. 17, pp. 2549-2551, Apr. 26, 1999.
Merkulov, et al., “Scanned-probe field-emission studies of vertically aligned carbon nanofibers” Journal of Applied Physics, vol. 89, No. 3, pp. 1933-1937, Feb. 1, 2001.
Bonard, et all, “Field emission from single-wall carbon nanotube films” Applied Physics Letters, vol. 73, No. 7, pp. 918-920, Aug. 17, 1998.
Xueping, et al., “Carbon Nanotube-based vacuum microelectronic gated cathode,” Material Research Society Symposium, vol. 509, pp. 107-109, 1998.
Dean, et al., “The environmental stability of field emission from single-walled carbon nanotubes” Applied Physics Letters, vol. 75, No. 19, pp. 3017-3019, Nov. 8, 1999.
Wang, et al., “Flat panel display prototype using gated carbon nanotube field emitters,” Applied Physics Letters, vol. 78, No. 9, pp. 1294-1296, Feb. 26, 2001.
Lee, et al., “Realization of Gated Field Emitters for Electrophotonic Applications Using Carbon Nanotube Line Emitters Directly Grown into Submicrometer Holes,” Advanced Materials Communications, vol. 13, No. 7, pp. 479-482, Apr. 4, 2001.
Guillorn, et al. “Microfabricated field emission devices using carbon nanofibers as cathode elements”, Journal of Vaccuum Science Technology B19(6), pp. 2598-2601, Nov./Dec. 2001.
Guillorn Michael A.
Lowndes Douglas H.
Merkulov Vladimir I.
Simpson Michael L.
Bruckner PC John
Fulk Steven J.
Smith Bradley K.
UT-Battelle LLC
LandOfFree
Carbon containing tips with cylindrically symmetrical carbon... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Carbon containing tips with cylindrically symmetrical carbon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Carbon containing tips with cylindrically symmetrical carbon... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3591897