Carbon containing silicon oxide film having high ashing...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S759000, C257SE21277, C257SE21261

Reexamination Certificate

active

07420279

ABSTRACT:
An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm−1) to Si—CH3 bond (1270 cm−1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.

REFERENCES:
patent: 5783452 (1998-07-01), Jons et al.
patent: 6054379 (2000-04-01), Yau et al.
patent: 6071810 (2000-06-01), Wada et al.
patent: 6159871 (2000-12-01), Loboda et al.
patent: 6485815 (2002-11-01), Jeong et al.
patent: 6506680 (2003-01-01), Kim et al.
patent: 6555461 (2003-04-01), Woo et al.
patent: 6686285 (2004-02-01), Miyajima et al.
patent: 6764774 (2004-07-01), Grill et al.
patent: 6858539 (2005-02-01), Minamihaba et al.
patent: 2001-326224 (2001-11-01), None
patent: 2001-345317 (2001-12-01), None
patent: 2002-110670 (2002-04-01), None
patent: 2002-252228 (2002-09-01), None
patent: 2002-299337 (2002-10-01), None
patent: 2002-329718 (2002-11-01), None
patent: 2003-017561 (2003-01-01), None
patent: 2004-534373 (2004-11-01), None
Japanese Office Action mailed Dec. 26, 2006.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Carbon containing silicon oxide film having high ashing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Carbon containing silicon oxide film having high ashing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Carbon containing silicon oxide film having high ashing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3988805

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.