Capping of metal interconnects in integrated circuit...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S656000, C438S659000, C438S672000, C438S674000

Reexamination Certificate

active

11852513

ABSTRACT:
A multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device, and a method for forming the cap.

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