Capping of metal interconnects in integrated circuit...

Details Capping of metal interconnects in integrated circuit... Capping of metal interconnects in integrated circuit...

2008-07-01

2008-07-01

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S656000, C438S659000, C438S672000, C438S674000

Reexamination Certificate

active

11852513

ABSTRACT:
A multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device, and a method for forming the cap.

REFERENCES:
patent: 4122215 (1978-10-01), Vratny
patent: 4692349 (1987-09-01), Georgiou et al.
patent: 4770899 (1988-09-01), Zeller
patent: 5169680 (1992-12-01), Ting et al.
patent: 5240497 (1993-08-01), Shacham et al.
patent: 5380560 (1995-01-01), Kaja et al.
patent: 5382447 (1995-01-01), Kaja et al.
patent: 5545927 (1996-08-01), Farooq et al.
patent: 5549808 (1996-08-01), Farooq et al.
patent: 5674787 (1997-10-01), Zhao et al.
patent: 5695810 (1997-12-01), Dubin et al.
patent: 5705857 (1998-01-01), Farooq et al.
patent: 5824599 (1998-10-01), Schacham-Diamand et al.
patent: 5891513 (1999-04-01), Dubin et al.
patent: 5898222 (1999-04-01), Farooq et al.
patent: 6060176 (2000-05-01), Semkow et al.
patent: 6144099 (2000-11-01), Lopatin et al.
patent: 6153935 (2000-11-01), Edelstein et al.
patent: 6180523 (2001-01-01), Lee et al.
patent: 6259160 (2001-07-01), Lopatin et al.
patent: 6297146 (2001-10-01), Lopatin
patent: 6323128 (2001-11-01), Sambucetti et al.
patent: 6358832 (2002-03-01), Edelstein et al.
patent: 6413854 (2002-07-01), Uzoh et al.
patent: 6455425 (2002-09-01), Besser et al.
patent: 6479384 (2002-11-01), Komai et al.
patent: 6551931 (2003-04-01), Edelstein et al.
patent: 6645567 (2003-11-01), Chebiam et al.
patent: 6646345 (2003-11-01), Sambucetti et al.
patent: 6680540 (2004-01-01), Kakano et al.
patent: 6696758 (2004-02-01), Dubin et al.
patent: 6706422 (2004-03-01), Inoue et al.
patent: 6709561 (2004-03-01), Pavlov et al.
patent: 6716330 (2004-04-01), Hongo et al.
patent: 6717189 (2004-04-01), Inoue et al.
patent: 6779711 (2004-08-01), Edelstein et al.
patent: 6783628 (2004-08-01), Yamamoto et al.
patent: 6784088 (2004-08-01), Edelstein et al.
patent: 6787467 (2004-09-01), Ogure et al.
patent: 6881437 (2005-04-01), Ivanov et al.
patent: 6924232 (2005-08-01), Mathew et al.
patent: 6977224 (2005-12-01), Dubin et al.
patent: 7008872 (2006-03-01), Dubin et al.
patent: 7049234 (2006-05-01), Cheng et al.
patent: 2003/0116439 (2003-06-01), Seo et al.
patent: 2003/0143837 (2003-07-01), Gandikota et al.
patent: 2004/0235237 (2004-11-01), Inoue et al.
patent: 2005/0029662 (2005-02-01), Nakano et al.
patent: 2005/0101130 (2005-05-01), Lopatin et al.
patent: 2005/0266265 (2005-12-01), Cheng et al.
patent: 2006/0234508 (2006-10-01), Shirakashi et al.
patent: 02/092878 (2002-11-01), None
patent: 02/101822 (2002-12-01), None
patent: 03/098676 (2003-11-01), None
Hirsch, S., “Immersion Plating,” Metal Finishing, Guidebook and Directory Issue '89, Jan. 1989, pp. 402-407, vol. 67, No. 1A, Metals and Plastics Publications, Inc., Hackensack, New Jersey.
International Search Report, PCT/US2005/020655, dated Oct. 20, 2005.
Itabashi, T., et al., “Electroless Deposited CoWB for Copper Divvusion Barrier Metal,” IEEE, 2002, pp. 285-287.
Kohn, A., et al., “Characterization of Electroless Deposited Co(W,P) Thin Ims for Encapsulation of Copper Metallization,” Materials Science and Engineering, 2001, pp. 18-25, vol. A 302.
Lopatin, S.D., et al., “Thin Electroless Barrier for Copper Films,” Part of the SPIE Conference on Multilevel Interconnect Technology II, Sep. 1998, pp. 65-77, vol. 3508, Santa Clara, California.
Shacham-Diamand, Y., et al., “Electroless Deposition of Thin-Film Cobalt-Tungsten-Phosphorus Layers Using Tungsten Phosphoric Acid ÄH3çPÄW3O10Å4ÈÅ for ULSI and MEMS Applications,” Journal of he Electrochemical Society, 2001, pp. C162-C167, vol. 148, The Electrochemical Society.

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