Capping of metal interconnects in integrated circuit...

Details Capping of metal interconnects in integrated circuit... Capping of metal interconnects in integrated circuit...

2007-09-11

2007-09-11

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S656000, C438S659000, C438S672000, C438S674000

Reexamination Certificate

active

10867346

ABSTRACT:
A multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device, and a method for forming the cap.

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