Capping of copper structures in hydrophobic ILD using...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S763000, C438S778000

Reexamination Certificate

active

07119019

ABSTRACT:
Capping of copper structures in hydrophobic interlayer dielectric layer, using aqueous electro-less bath is described herein.

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