Capillary pressure relief for magnetic Kyropoulos growth of semi

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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1566161, 1566162, 1566163, 1566164, 15661641, 156DIG70, C30B 1102

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active

052521753

ABSTRACT:
In the liquid encapsulated Kyropoulos process, the crystal is allowed to grow to the limits of the crucible and remain under the encapsulant fluid. In order to relieve the melt pressure between the growing crystal and the crucible, at least one capillary pressure relief hole is placed in the crucible which allows some of the melt to leak therefrom to relieve pressure.

REFERENCES:
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patent: 4684515 (1987-08-01), Kawasaki et al.
patent: 4840699 (1989-06-01), Khattak et al.
Ahern et al., Magnetically Stablized Kyropoulos Growth of Undoped InP, Materials Letters, vol. 8, No. 11, 12, Nov. 89, pp. 486-488.
Liquid Encapsulated Czochralski Growth of GaAs; Weiner et al; Bell Telephone Laboratories, Inc.; J. Electrochem Soc.; vol. 118, No. 2 (Feb.) 1971.
Solar-Grade Silicon by Directional Solidification in Carbon Crucibles; Ciszek et al; IBM J. Res. Dev.; vol. 23; No. 3 (May 1979).
"Methods of Growing Crystal Under Pressure" 9.2.2 and 9.2.3; Fischer; Crystal Growth; 2nd ed. vol. 16, pp. 362-364.

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