Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-05-12
1993-09-14
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257301, 257190, 257 68, H01L 2968, H01L 2978, H01L 2992
Patent
active
052452069
ABSTRACT:
A capacitor is provided having a substrate and a first capacitor plate including a lattice mismatched crystalline material is formed over and supported by a surface of the substrate. A layer of insulating material is formed over and supported by the first capacitor plate. A second capacitor plate including a layer of conductive material is formed over and supported by the layer of insulating material.
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J. Murota, et al., "Low-Temperature Silicon Selective Deposition & Epitaxy on Silicon Using the Thermal Decomposition of Siland Under Ultraclean Environment" Appl. Phys. Lett. 54, pp. 1007-1009 (Mar. 13, 1989).
Y. Hayashide, et al., "Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode" Extended Abstracts of the 22nd International Conference on Solid State Devices & Materials, pp. 869-872 (Nov. 1990).
H. Watanabe, et al., "A New Stacked Capacitor Structure Using Hemispherical-Grain (HSG) Poly-Silicon Electrodes" pp. 873-876 Extended Abstracts of the 22nd International Conference on Solid State Devices & Materials (Nov. 1990).
W. J. Varhue, et al., "Surface Morphology of Epitaxial Ge on Si Grown by Plasma Enhanced Chemical Vapor Deposition" pp. 26-28 (Oct. 1990).
Chu Jack O.
Hsu Louis L.
Mii Toshio
Shepard Joseph F.
Stiffler Scott R.
Brandt Jeffrey L.
Hille Rolf
Huberfeld Harold
International Business Machines - Corporation
Limanek Robert
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