Capacitors with roughened single crystal plates

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257301, 257190, 257 68, H01L 2968, H01L 2978, H01L 2992

Patent

active

052452069

ABSTRACT:
A capacitor is provided having a substrate and a first capacitor plate including a lattice mismatched crystalline material is formed over and supported by a surface of the substrate. A layer of insulating material is formed over and supported by the first capacitor plate. A second capacitor plate including a layer of conductive material is formed over and supported by the layer of insulating material.

REFERENCES:
patent: 4397075 (1983-08-01), Fatula, Jr.
patent: 4717689 (1988-01-01), Maas et al.
patent: 4906590 (1990-03-01), Kanetaki et al.
patent: 5130885 (1992-07-01), Fazan et al.
patent: 5191509 (1993-03-01), Wen
J. C. Bean, et al., "Ge.sub.x Si.sub.1-x /Si Strained-Layer Superlattice Grown by Molecular Beam Epitaxy" J. Vac. Sci, Technol. A2 (2) pp. 436-440 (Apr.-Jun. 1984).
J. Murota, et al., "Low-Temperature Silicon Selective Deposition & Epitaxy on Silicon Using the Thermal Decomposition of Siland Under Ultraclean Environment" Appl. Phys. Lett. 54, pp. 1007-1009 (Mar. 13, 1989).
Y. Hayashide, et al., "Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode" Extended Abstracts of the 22nd International Conference on Solid State Devices & Materials, pp. 869-872 (Nov. 1990).
H. Watanabe, et al., "A New Stacked Capacitor Structure Using Hemispherical-Grain (HSG) Poly-Silicon Electrodes" pp. 873-876 Extended Abstracts of the 22nd International Conference on Solid State Devices & Materials (Nov. 1990).
W. J. Varhue, et al., "Surface Morphology of Epitaxial Ge on Si Grown by Plasma Enhanced Chemical Vapor Deposition" pp. 26-28 (Oct. 1990).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Capacitors with roughened single crystal plates does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitors with roughened single crystal plates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitors with roughened single crystal plates will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2029578

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.