Capacitors

Details Capacitors Capacitors

2005-05-10

2005-05-10

Smith, Matthew (Department: 2825)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S299000, C257S300000, C257S301000, C257S302000, C257S303000, C257S304000, C257S305000, C257S306000, C257S307000, C257S308000, C257S309000, C257S310000, C257S311000, C257S312000, C257S313000, C257S239000

Reexamination Certificate

active

06891215

ABSTRACT:
A method of forming a capacitor includes forming first and second capacitor electrodes over a substrate. A capacitor dielectric region is formed intermediate the first and second capacitor electrodes, and includes forming a silicon nitride comprising layer over the first capacitor electrode. A silicon oxide comprising layer is formed over the silicon nitride comprising layer. The silicon oxide comprising layer is exposed to an activated nitrogen species generated from a nitrogen-containing plasma effective to introduce nitrogen into at least an outermost portion of the silicon oxide comprising layer. Silicon nitride is formed therefrom effective to increase a dielectric constant of the dielectric region from what it was prior to said exposing. Capacitors and methods of forming capacitor dielectric layers are also disclosed.

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