Capacitorless DRAM having a hole reserving unit

Details Capacitorless DRAM having a hole reserving unit Capacitorless DRAM having a hole reserving unit

2011-07-12

2011-07-12

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE27084, C257SE27085

Reexamination Certificate

active

07977707

ABSTRACT:
Provided are a capacitorless DRAM and methods of manufacturing the same. The capacitorless DRAM may include a substrate including a source, a drain and a channel, a gate on the channel of the substrate, and a hole reserving unit below the channel.

REFERENCES:
patent: 6487112 (2002-11-01), Wasshuber
patent: 6633066 (2003-10-01), Bae et al.
patent: 6969662 (2005-11-01), Fazan et al.
patent: 7602001 (2009-10-01), Gonzalez

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