Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-10-28
2011-12-27
Pham, Thanhha (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S304000, C257S311000, C257SE27086
Reexamination Certificate
active
08084804
ABSTRACT:
A capacitor with zirconium oxide and a method for fabricating the same are provided. The method includes: forming a storage node; forming a multi-layered dielectric structure on the storage node, the multi-layered dielectric structure including a zirconium oxide (ZrO2) layer and an aluminum oxide (Al2O3) layer; and forming a plate electrode on the multi-layered dielectric structure.
REFERENCES:
patent: 6407435 (2002-06-01), Ma et al.
patent: 6570253 (2003-05-01), Lim et al.
patent: 6596602 (2003-07-01), Iizuka et al.
patent: 6627503 (2003-09-01), Ma et al.
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6664186 (2003-12-01), Callegari et al.
patent: 6767795 (2004-07-01), Ahn et al.
patent: 6774050 (2004-08-01), Ahn et al.
patent: 6787863 (2004-09-01), Nakajima
patent: 6797525 (2004-09-01), Green et al.
patent: 6875678 (2005-04-01), Jung et al.
patent: 6903398 (2005-06-01), Yamamoto
patent: 2002/0014647 (2002-02-01), Seidi et al.
patent: 2002/0021544 (2002-02-01), Cho et al.
patent: 2002/0106536 (2002-08-01), Lee et al.
patent: 2002/0135048 (2002-09-01), Ahn et al.
patent: 2002/0153579 (2002-10-01), Yamamoto
patent: 2002/0190294 (2002-12-01), Iizuka et al.
patent: 2003/0213987 (2003-11-01), Basceri et al.
patent: 2004/0048491 (2004-03-01), Jung et al.
patent: 2004/0104420 (2004-06-01), Coolbaugh et al.
patent: 2004/0141390 (2004-07-01), Won et al.
patent: 2004/0235242 (2004-11-01), Basceri et al.
patent: 2005/0051824 (2005-03-01), Iizuka et al.
patent: 2005/0054165 (2005-03-01), Ahn et al.
patent: 1391283 (2003-01-01), None
patent: 1469490 (2004-01-01), None
patent: 1 124 262 (2001-08-01), None
patent: 2001-267566 (2001-09-01), None
patent: 2002-222934 (2002-08-01), None
patent: 2002-314072 (2002-10-01), None
patent: 2002-319583 (2002-10-01), None
patent: 2002-373945 (2002-12-01), None
patent: 10-2002-0002579 (2002-01-01), None
patent: 10-2003-0003324 (2003-01-01), None
patent: 10-2005-0075790 (2005-08-01), None
patent: 10-2005-0079599 (2005-08-01), None
patent: 10-2005-0102202 (2005-10-01), None
patent: 10-2005-0103065 (2005-10-01), None
patent: 10-2005-0123428 (2005-10-01), None
patent: 10-2005-0107399 (2005-11-01), None
patent: 10-0587086 (2006-05-01), None
patent: 1020060041355 (2006-05-01), None
patent: 100596805 (2006-06-01), None
patent: 10-0655139 (2006-12-01), None
patent: 10-0655140 (2006-12-01), None
patent: 10-0656283 (2006-12-01), None
patent: 10-2007-0000707 (2007-01-01), None
patent: 10-2007-0000759 (2007-01-01), None
patent: 10-2007-0002579 (2007-01-01), None
patent: 10-2007-0003031 (2007-01-01), None
patent: 10-0670726 (2007-01-01), None
patent: 10-0672766 (2007-01-01), None
patent: 452922 (2001-09-01), None
patent: 506051 (2001-10-01), None
patent: 577130 (2004-02-01), None
Stesmans, A. et al.; “Paramagnetic defects in annealed ultrathin layers of SiO1, Al2O3, and ZrO2on(100)Si”; vol. 85, No. 17; pp. 3792-3794; 2004 American Insititute of Physics.
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Pham Thanhha
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