Capacitor with high dielectric constant materials and method...

Details Capacitor with high dielectric constant materials and method... Capacitor with high dielectric constant materials and method...

2006-05-02

2006-05-02

Kennedy, Jennifer (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S253000, C438S240000, C438S396000

Reexamination Certificate

active

07037730

ABSTRACT:
Stabilized capacitors and DRAM cells using high dielectric constant oxide dielectric materials such as Ta2O5and BaxSr(1−x)TiO3, and methods of making such capacitors and DRAM cells are provided. A preferred method includes providing a conductive oxide electrode, depositing a first layer of a high dielectric constant oxide dielectric material on the conductive oxide electrode, oxidizing the conductive oxide electrode and the first layer of the high dielectric constant oxide dielectric material under oxidizing conditions, depositing a second layer of the high dielectric constant oxide dielectric material on the first layer of the dielectric, and depositing an upper layer electrode on the second layer of the high dielectric constant oxide dielectric material.

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