Capacitor with hafnium, lanthanum and oxygen mixed...

Details Capacitor with hafnium, lanthanum and oxygen mixed... Capacitor with hafnium, lanthanum and oxygen mixed...

2008-01-22

2008-01-22

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S785000, C257SE21193, C257SE21279, C257SE21290, C257SE21648, C257SE21280

Reexamination Certificate

active

07320943

ABSTRACT:
Disclosed is a capacitor with a dielectric layer having a low equivalent oxide thickness compared to a HfO2layer and capable of decreasing a level of a leakage current incidence and a method for fabricating the same. Particularly, the capacitor includes: a bottom electrode; a Hf1-xLaxO layer on the bottom electrode; and a top electrode on the Hf1-xLaxO layer, wherein x is an integer. The method includes the steps of: forming at least one bottom electrode being made of polysilicon doped with impurities; nitriding a surface of the bottom electrode; depositing the amorphous Hf1-xLaxO layer on the nitrided surface of the bottom electrode; performing a thermal process for crystallizing the amorphous Hf1-xLaxO layer and removing impurities existed within the Hf1-xLaxO layer; nitriding a surface of the crystallized Hf1-xLaxO layer; and forming the top electrode being made of polysilicon doped with impurities on the nitrided surface of the crystallized Hf1-xLaxO layer.

REFERENCES:
patent: 2003/0205729 (2003-11-01), Basceri et al.
patent: 2003/0213987 (2003-11-01), Basceri et al.
patent: 2004/0038554 (2004-02-01), Ahn et al.
patent: 2004/0046197 (2004-03-01), Basceri et al.
patent: 1997-0054073 (1997-07-01), None

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