Capacitor with enhanced performance and method of manufacture

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Reexamination Certificate

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C361S303000, C361S305000, C361S301100, C361S301500, C361S321100, C257S402000, C257S403000

Reexamination Certificate

active

06940705

ABSTRACT:
A decoupling capacitor is formed in a semiconductor substrate that includes a strained silicon layer. A substantially flat bottom electrode is formed in a portion of the strained silicon layer and a capacitor dielectric overlying the bottom electrode. A substantially flat top electrode overlies said capacitor dielectric. The top electrode is connected to a first reference voltage line and the bottom electrode is connected to a second reference voltage line.

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