Capacitor with electrodes made of ruthenium and method for...

Details Capacitor with electrodes made of ruthenium and method for... Capacitor with electrodes made of ruthenium and method for...

2007-01-30

2007-01-30

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S306000, C257S516000, C257S532000, C257S906000, C257S924000

Reexamination Certificate

active

10724134

ABSTRACT:
A method for patterning layers made of ruthenium or ruthenium(IV) oxide and a capacitor comprising at least one electrode which is constructed from ruthenium or ruthenium(IV) oxide at least in sections. A layer made of ruthenium or ruthenium(IV) oxide is deposited on a substrate and said layer is subsequently covered with a covering layer at least in sections. Through heat treatment of the construction thus obtained in an oxygen atmosphere, the ruthenium is converted into RuO4in the uncovered sections and removed by sublimation. The method enables the simple patterning of layers made of ruthenium or ruthenium(IV) oxide and the construction of complex structures, such as trench capacitors, for example.

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patent: WO 01/17014 (2001-03-01), None

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