Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-08-27
1999-01-19
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257300, 257532, 438239, H01L 2940
Patent
active
058616489
ABSTRACT:
A booster circuit is used to boost a first voltage using a capacitor unit so as to generate a second voltage. The capacitor unit has at least one MOS capacitor each formed by a MOS transistor, and at least one conductive electrode capacitor, each connected in parallel with corresponding MOS capacitor. Each conductive electrode capacitor includes a first conductive electrode and a second conductive electrode which are mutually opposed, and a dielectric layer interposed between the first and second conductive electrodes. Therefore, the low-voltage operating point margin of the booster circuit can be expanded while an increase in the area occupied by the booster circuit is suppressed.
REFERENCES:
patent: 4591738 (1986-05-01), Bialas, Jr. et al.
patent: 4831431 (1989-05-01), Hanlon
patent: 5530274 (1996-06-01), Fujioka
patent: 5631492 (1997-05-01), Ramus et al.
Fujitsu Limited
Hardy David B.
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