Capacitor structure of semiconductor memory cell and method for

Details Capacitor structure of semiconductor memory cell and method for Capacitor structure of semiconductor memory cell and method for

1997-10-17

1999-12-07

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, 257310, H01L 27108, H01L 2976, H01L 31119

Patent

active

059988258

ABSTRACT:
A capacitor structure in a semiconductor memory cell includes a lower electrode formed on a base body, a capacitor insulation film which is a ferroelectric thin film formed on the lower electrode, and an upper electrode formed on the capacitor insulation film. The lower electrode is shaped semi-spherical. The capacitor structure has an increased area of the upper electrode in contact with the ferroelectric thin film, local concentration of an electric field in the ferroelectric thin film is unlikely to occur.

REFERENCES:
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patent: 4799093 (1989-01-01), Kohara et al.
patent: 5124767 (1992-06-01), Koyama
patent: 5302844 (1994-04-01), Mizuno et al.
patent: 5847424 (1998-12-01), Kang
Silicon Processing for the VLSI Era, vol. 2, Lattice Press, S. Wolf, pp. 635-638, 1990.

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