Capacitor structure of semiconductor memory cell and fabrication

Details Capacitor structure of semiconductor memory cell and fabrication Capacitor structure of semiconductor memory cell and fabrication

1997-10-27

1999-01-26

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257303, 257300, H01L 2976, H01L 27108, H01L 31119, H01L 2994

Patent

active

058641530

ABSTRACT:
A capacitor structure of a semiconductor memory cell such as a FERAM has an upper electrode less susceptible a damage even by heat-treatment in a hydrogen gas atmosphere. The capacitor structure includes a lower electrode, a capacitor thin film formed of a ferroelectric thin film formed on the lower electrode, and an upper electrode formed on the capacitor thin film. The upper electrode is made of Ru.sub.1-x O.sub.x (0.1<x<0.64).

REFERENCES:
patent: 4440603 (1984-04-01), Van Effen et al.
patent: 5258217 (1993-11-01), Maniar et al.
patent: 5382320 (1995-01-01), Desu et al.
patent: 5702970 (1997-12-01), Choi
patent: 5728481 (1998-03-01), Kasai et al.

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