Capacitor structure for a semiconductor memory device

Details Capacitor structure for a semiconductor memory device Capacitor structure for a semiconductor memory device

1996-11-18

1998-09-22

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257298, 257300, 257301, 257303, H01L 27108, H01L 2976

Patent

active

058118489

ABSTRACT:
A semiconductor memory device includes a substrate, a transistor on the substrate, and a capacitor. The storage electrode of the capacitor includes upper and lower trunk-like conductive layers, and at least a first branch-like conductive layer. The branch-like conductive layer is L-shaped in cross section. The trunk-like conductive layer is connected to a source/drain region of the transistor.

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Wakamiya et al., "Novel Stacked Capacitor Cell for 64-Mb DRAM", 1989 Symposium on VLSI Technology Digest of Technical papers, pp. 69-70.

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