Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-24
1999-06-15
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257306, 257307, H01L 27108
Patent
active
059124857
ABSTRACT:
A semiconductor memory device includes a substrate, a transfer transistor, and a storage capacitor formed on the substrate. The transfer transistor has source/drain regions, one of which is electrically connected to the storage capacitor. The storage capacitor includes a tree-like conductive layer, a dielectric layer, and an upper conductive layer. The tree-like conductive layer includes a trunk-like conductive layer and a branch-like conductive layer. The trunk-like conductive layer and the branch-like conductive layer form a storage electrode of the storage capacitor. The upper conductive layer serves as an opposing electrode of the storage capacitor.
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Crane Sara
United Microelectronics Corporation
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