Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2007-08-28
2007-08-28
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C438S202000, C257S297000
Reexamination Certificate
active
11170504
ABSTRACT:
A manufacturing process modification is disclosed for producing a metal-insulator-metal (MIM) capacitor. The MIM capacitor may be used in memory cells, such as DRAMs, and may also be integrated into logic processing, such as for microprocessors. The processing used to generate the MIM capacitor is adaptable to current logic processing techniques. Other embodiments are described and claimed.
REFERENCES:
patent: 5759882 (1998-06-01), Kao et al.
patent: 6174803 (2001-01-01), Harvey
De Vivek K.
Keshavarzi Ali
Khellah Muhammad M.
Lu Shih-Lien L.
Paillet Fabrice
Boone P.C. Carrie A.
Dang Phuc T.
Intel Corporation
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