Capacitor structure for a logic process

Details Capacitor structure for a logic process Capacitor structure for a logic process

2007-08-28

2007-08-28

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S202000, C257S297000

Reexamination Certificate

active

11170504

ABSTRACT:
A manufacturing process modification is disclosed for producing a metal-insulator-metal (MIM) capacitor. The MIM capacitor may be used in memory cells, such as DRAMs, and may also be integrated into logic processing, such as for microprocessors. The processing used to generate the MIM capacitor is adaptable to current logic processing techniques. Other embodiments are described and claimed.

REFERENCES:
patent: 5759882 (1998-06-01), Kao et al.
patent: 6174803 (2001-01-01), Harvey

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