Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-27
2010-11-23
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S308000, C257S535000, C257SE27088, C257SE27089, C257SE21012
Reexamination Certificate
active
07838919
ABSTRACT:
The capacitor structure includes a first electrode having a plurality of teeth protruding in a comb shape from an electrode base of a first electrode line and a second electrode having a plurality of teeth protruding in a comb shape from an electrode base of a second electrode line, both formed in a first wiring layer. The first and second electrodes face each other with their teeth interdigitated with each other via a dielectric. At least one of the teeth of the first electrode is electrically connected with a third electrode line formed in a second wiring layer.
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Adachi Kazuki
Okamoto Kiyomi
Sugioka Tetsurou
Fourson George
McDermott Will & Emery LLP
Panasonic Corporation
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