Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-20
2008-03-04
Pham, Hoai v (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000, C257SE27034, C257SE27048
Reexamination Certificate
active
07339225
ABSTRACT:
A capacitor structure is provided. The capacitor structure is configured in a substrate. The capacitor structure includes a plurality of electrode sets, at least a first conductive plug and at least a second conductive plug. The electrode sets correspond with each other and are disposed in different layers of the substrate. Each electrode set comprises a first electrode and a second electrode surrounding the former. In addition, the first conductive plug and the second conductive plug are disposed between two adjacent electrode sets. First electrodes of two adjacent electrode sets correspond with each other and are electrically connected to each other through the first conductive plug. Similarly, second electrodes of two adjacent electrode sets correspond with each other and are electrically connected to each other through the second conductive plug.
REFERENCES:
patent: 5583359 (1996-12-01), Ng et al.
Chien Chih-Fu
Chou Cheng-Chung
Lee Chao-Chi
Faraday Technology Corp.
Hsu Winston
Nguyen DiLinh
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