Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1979-11-28
1981-02-10
Hecker, Stuart N.
Static information storage and retrieval
Systems using particular element
Capacitors
G11C 1124
Patent
active
042505682
ABSTRACT:
A semiconductor storage circuit has a plurality of storage elements which are provided with storage capacitors and which are grouped in rows and columns and integrated on a doped semiconductor body. The storage elements which form a row are provided with a common first drive line and the storage elements which form a column are provided with a second common drive line. The first drive lines are formed from strip-like electrically conductive layers which are separated by an insulating layer from the surface of the semiconductor body and the second drive lines consist of buried lines which extend within the semiconductor body and are oppositely doped with respect to the body. The insulating layer is designed to be thinner within the intersection zones of the drive lines so that in these zones insulating layer capacitors are formed which possess outer electrodes composed of parts of the first drive lines and which represent storage capacitors of the storage elements. The widths of the buried lines which represent the second drive lines are designed to be less than the dimensions, oriented transversely to these strips, of the outer electrodes, and between the buried lines which represent the second drive lines further buried lines are arranged which can be connected by way of terminals to a voltage source.
REFERENCES:
R. Koch et al., "Three-Terminal CID as Random Access Memory Cell," IEEE Jour. of Solid-State Circuits, vol. SC-12, No. 5, 10/77, pp. 534-536.
J. I. Raffel et al., "Storage Experiments with Ultra-High Density MNOS Capacitors," IEEE Proceedings, vol. 64, p. 11, 11/76.
Geipel et al., "Self-Aligned Fine Line Process for Making Capacitor Memories," IBM Tech. Disc. Bul., vol. 20, No. 7, 12/77, pp. 2588-2589.
Hecker Stuart N.
Siemens Aktiengesellschaft
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