Capacitor produced in a semiconductor device

Details Capacitor produced in a semiconductor device Capacitor produced in a semiconductor device

1997-07-15

1999-08-17

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257307, 257311, H01L 27108, H01L 2976

Patent

active

059397470

ABSTRACT:
A capacitor having the pipe structure produced in a semiconductor device, wherein the number of combinations of two pieces of pipe shaped electrodes which face to each other across a pipe shaped dielectric layer is plural, so that the capacitor of this invention is allowed to have a large surface area in which two electrodes face to each other across a dielectric layer, resultantly increasing the amount of electrostatic capacity per unit horizontal area thereof without being accompanied by a decrease in integration and a decrease in the mechanical reliability.

REFERENCES:
patent: 5164881 (1992-11-01), Ahn
patent: 5315142 (1994-05-01), Acovic et al.
patent: 5512768 (1996-04-01), Lur et al.
patent: 5719419 (1998-02-01), Chao

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