Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-10-14
2008-08-26
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S307000, C438S399000
Reexamination Certificate
active
07417275
ABSTRACT:
A capacitor pair structure for increasing the match thereof has two finger electrode structures interlacing with each other in parallel and a common electrode being between the two finger electrode structures to form a capacitor pair structure with an appropriate ratio. Also, the capacitor pair structure could further increase its entire capacitance through vias connecting the same capacitor pair structures on different metal layers.
REFERENCES:
patent: 5583359 (1996-12-01), Ng et al.
patent: 2004/0031982 (2004-02-01), Devries et al.
patent: 2004/0046230 (2004-03-01), Bernstein et al.
patent: 2006/0006496 (2006-01-01), Harris et al.
Birch, Stewart, Kolasch and Birch LLP
Cao Phat X.
Kalam Abul
VIA Technologies Inc.
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