Capacitor of semiconductor memory device and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S301000, C257S310000

Reexamination Certificate

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06936880

ABSTRACT:
A capacitor and a method of manufacturing the same are disclosed. The BST dielectric film is disposed between the lower electrode by coating a sidewall of the upper electrode and then forming the lower electrode in a second contact hole defined by the upper electrode and BST film. As such, degradation in the step coverage characteristic caused by forming a BST dielectric film having a desired composition ratio is avoided.

REFERENCES:
patent: 5593495 (1997-01-01), Masuda et al.
patent: 6150689 (2000-11-01), Narui et al.
patent: 6300652 (2001-10-01), Risch et al.
patent: 6320244 (2001-11-01), Alers et al.
patent: 6326258 (2001-12-01), Iizuka
patent: 2001/0025977 (2001-10-01), Hieda
patent: 2001/0036752 (2001-11-01), Deboer et al.
patent: 2002/0019109 (2002-02-01), Iizuka
patent: 2002/0030217 (2002-03-01), Hong
patent: 2002/0153554 (2002-10-01), Kajita et al.
patent: 2002/0185671 (2002-12-01), Kim

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