Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-30
2005-08-30
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S310000
Reexamination Certificate
active
06936880
ABSTRACT:
A capacitor and a method of manufacturing the same are disclosed. The BST dielectric film is disposed between the lower electrode by coating a sidewall of the upper electrode and then forming the lower electrode in a second contact hole defined by the upper electrode and BST film. As such, degradation in the step coverage characteristic caused by forming a BST dielectric film having a desired composition ratio is avoided.
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Flynn Nathan J.
Hyundai Electronics Industries Co,. Ltd.
Mandala Jr. Victor A.
Marshall & Gerstein & Borun LLP
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