Capacitor of semiconductor device and method of fabricating...

Details Capacitor of semiconductor device and method of fabricating... Capacitor of semiconductor device and method of fabricating...

2011-06-07

2011-06-07

Thai, Luan C (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S310000

Reexamination Certificate

active

07956398

ABSTRACT:
Disclosed are a capacitor of a semiconductor device and a method of fabricating the same. The capacitor includes a capacitor top electrode, a capacitor bottom electrode aligned with a bottom surface and three lateral sides of the capacitor top electrode, and a capacitor insulating layer between the capacitor top electrode and the capacitor bottom electrode.

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Kuo-Tai Huang, Wen-Yi Sie and Tri-Reong Yoo; “Capacitor of Semiconductor Device and Method of Fabricating the Same”; Korean Patent Abstracts; Publication No. 1020000015040 A; Publication Date: Mar. 15, 2000; Korean Intellectual Property Office, Republic of Korea.

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