Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-12
2009-12-29
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27092, C257SE27093
Reexamination Certificate
active
07638829
ABSTRACT:
A transistor formed on a semiconductor substrate has a gate electrode formed via a gate insulating film and first and second diffusion layers formed in the semiconductor substrate, the first and second diffusion layers being positioned at both sides of the gate electrode. A first electrode is connected to the first diffusion layer of the transistor. A capacitor insulating film formed on the first electrode is formed of a silicon oxide film containing a substrate which is faster than Cu in diffusion velocity and which more readily reacts with oxygen than Cu does. A second electrode formed on the capacitor insulating film is formed of one of a Cu layer and another Cu layer containing the substance.
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Hayashi Yumi
Nasu Hayato
Tanimoto Hiroyoshi
Tsumura Kazumichi
Usui Takamasa
Foley & Lardner LLP
Kabushiki Kaisha Toshiba
Loke Steven
Taylor Earl N
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