Capacitor of dynamic random access memory and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE27092, C257SE27093

Reexamination Certificate

active

07638829

ABSTRACT:
A transistor formed on a semiconductor substrate has a gate electrode formed via a gate insulating film and first and second diffusion layers formed in the semiconductor substrate, the first and second diffusion layers being positioned at both sides of the gate electrode. A first electrode is connected to the first diffusion layer of the transistor. A capacitor insulating film formed on the first electrode is formed of a silicon oxide film containing a substrate which is faster than Cu in diffusion velocity and which more readily reacts with oxygen than Cu does. A second electrode formed on the capacitor insulating film is formed of one of a Cu layer and another Cu layer containing the substance.

REFERENCES:
patent: 5266511 (1993-11-01), Takao
patent: 5571742 (1996-11-01), Jeong
patent: 6066892 (2000-05-01), Ding et al.
patent: 6130450 (2000-10-01), Kohyama et al.
patent: 6348402 (2002-02-01), Kawanoue et al.
patent: 6664185 (2003-12-01), Wang et al.
patent: 6706629 (2004-03-01), Lin et al.
patent: 6922351 (2005-07-01), Natori et al.
patent: 7012002 (2006-03-01), Kim et al.
patent: 7078336 (2006-07-01), Cheng et al.
patent: 7304384 (2007-12-01), Koike et al.
patent: 2002/0043700 (2002-04-01), Sasaki et al.
patent: 2002/0064970 (2002-05-01), Chooi et al.
patent: 2002/0094615 (2002-07-01), Kunikiyo
patent: 2003/0227089 (2003-12-01), Watanabe et al.
patent: 2004/0106254 (2004-06-01), Furuhata et al.
patent: 2004/0150073 (2004-08-01), Matumoto et al.
patent: 2004/0183142 (2004-09-01), Matsuo et al.
patent: 2004/0245606 (2004-12-01), Chiang et al.
patent: 2006/0017115 (2006-01-01), Tu et al.
patent: 2007/0002239 (2007-01-01), Koike
patent: 2007/0004049 (2007-01-01), Nasu et al.
patent: 2007/0057302 (2007-03-01), Ho et al.
patent: 2-062035 (1990-03-01), None
patent: 5-047760 (1993-02-01), None
patent: 6-326267 (1994-11-01), None
patent: 8-115914 (1996-05-01), None
patent: 8-139092 (1996-05-01), None
patent: 9-97880 (1997-04-01), None
patent: 11-054458 (1999-02-01), None
patent: 11-087349 (1999-03-01), None
patent: 2001-044156 (2001-02-01), None
patent: 2003-332261 (2003-11-01), None
patent: 2004-172169 (2004-06-01), None
patent: 2004-235616 (2004-08-01), None
patent: 2005-277390 (2005-10-01), None
patent: 10-0203536 (1999-06-01), None
patent: 2002-0026568 (2002-04-01), None
patent: WO 01/13415 (2001-02-01), None
patent: WO 03/023858 (2003-03-01), None
U.S. Appl. No. 11/440,453, filed May 25, 2006, Usui et al.
T. Usui et al., “Low Resistive and Highly Reliable Cu Dual-Damascene Interconnect Technology Using Self-Formed MnSi OyBarrier Layer,” Proceeding of IEEE IITC, Jun. 2005, 3 pages.
J. Koike et al., “Self-forming diffusion barrier layer in Cu-Mn alloy metallization”, Applied Physics Letters 87, Jul. 22, 2005, pp. 041911-1-041911-3.
T. Usui et al., “Low Resistive and Highly Reliable Cu Dual-Damascene Interconnect Technology Using Self-Formed MnSixOybarrier Layer”, Proceeding of IEEE IITC, Jun. 2005, 3 pages.
T. Usui, U.S. PTO Office Action, U.S. Appl. No. 11/440,453, dated Dec. 10, 2008, 8 pages.
T. Usui, U.S. PTO Office Action, U.S. Appl. No. 11/440,453, dated May 9, 2008, 13 pages.
J. Koike, U.S. PTO Office Action, U.S. Appl. No. 11/063,876, dated Mar. 1, 2007, 13 pages.
W. A. Lanford et al., Low-temperature passivation of copper by doping with Al or Mg, Thin Solid Films, vol. 262, 1995, pp. 234-241.

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