Semiconductor device manufacturing: process – Making metal-insulator-metal device
Reexamination Certificate
2005-07-01
2008-08-05
Sefer, Ahmed (Department: 2826)
Semiconductor device manufacturing: process
Making metal-insulator-metal device
C438S253000, C257S532000, C257S535000, C257S310000, C257SE21546, C257SE21548, C257SE21645
Reexamination Certificate
active
07407897
ABSTRACT:
In a capacitor of an analog semiconductor device having a multi-layer dielectric film and a method of manufacturing the same, the multi-layer dielectric film can be readily manufactured, has weak reactivity with corresponding electrodes and offers excellent leakage current characteristics. In order to obtain these advantages, a lower dielectric film having a negative quadratic VCC, an intermediate dielectric film having a positive quadratic VCC, and an upper dielectric film having a negative quadratic VCC are sequentially formed between a lower electrode and an upper electrode. The lower dielectric film and the upper dielectric film may be composed of SiO2. The intermediate dielectric film may be composed of HFO2.
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Jeong Yong-kuk
Kim Weon-hong
Kwon Dae-jin
Song Min-woo
Won Seok-jun
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Sefer Ahmed
LandOfFree
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