Capacitor of an integrated circuit device and method of...

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S244000, C438S253000, C438S254000, C438S387000, C438S396000, C438S627000, C438S643000, C257S303000, C257S307000

Reexamination Certificate

active

06927143

ABSTRACT:
The present invention relates to a capacitor of a semiconductor memory cell and a method of manufacturing the same wherein a capacitor includes a first insulation layer having a buried contact hole, formed on a semiconductor substrate, and a buried contact plug filling a portion of the buried contact hole. A diffusion barrier spacer is formed on an inner surface of the buried contact hole above the buried contact plug. A second insulation layer is formed, having a through hole larger than the buried contact hole, for exposing the diffusion barrier spacer and a top surface of the contact plug. A barrier layer is formed on the through hole and a lower electrode is formed on the barrier layer. A dielectric layer is formed on the lower electrode and an upper surface of the second insulation layer and an upper electrode is formed on the dielectric layer.

REFERENCES:
patent: 5330931 (1994-07-01), Emesh et al.
patent: 5416042 (1995-05-01), Beach et al.
patent: 5585998 (1996-12-01), Kotecki et al.
patent: 6184074 (2001-02-01), Crenshaw et al.
patent: 6228736 (2001-05-01), Lee et al.
patent: 6455424 (2002-09-01), McTeer et al.
patent: 6461911 (2002-10-01), Ahn et al.
patent: 6509601 (2003-01-01), Lee et al.
patent: 6579755 (2003-06-01), Kim et al.
patent: 6596580 (2003-07-01), Lian et al.
patent: 2002/0142488 (2002-10-01), Hong
patent: 101 31 490 (2001-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Capacitor of an integrated circuit device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor of an integrated circuit device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor of an integrated circuit device and method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3520469

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.