Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2005-08-09
2005-08-09
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S244000, C438S253000, C438S254000, C438S387000, C438S396000, C438S627000, C438S643000, C257S303000, C257S307000
Reexamination Certificate
active
06927143
ABSTRACT:
The present invention relates to a capacitor of a semiconductor memory cell and a method of manufacturing the same wherein a capacitor includes a first insulation layer having a buried contact hole, formed on a semiconductor substrate, and a buried contact plug filling a portion of the buried contact hole. A diffusion barrier spacer is formed on an inner surface of the buried contact hole above the buried contact plug. A second insulation layer is formed, having a through hole larger than the buried contact hole, for exposing the diffusion barrier spacer and a top surface of the contact plug. A barrier layer is formed on the through hole and a lower electrode is formed on the barrier layer. A dielectric layer is formed on the lower electrode and an upper surface of the second insulation layer and an upper electrode is formed on the dielectric layer.
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Lee, Sterba & Morse P.C.
Samsung Electronics Co,. Ltd.
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