Capacitor of a memory device and fabrication method thereof

Details Capacitor of a memory device and fabrication method thereof Capacitor of a memory device and fabrication method thereof

2007-07-31

2007-07-31

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S068000, C257S071000, C257S296000, C257S298000, C257S300000, C257S303000, C257S306000

Reexamination Certificate

active

11120184

ABSTRACT:
A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.

REFERENCES:
patent: 6368910 (2002-04-01), Sheu et al.
patent: 2003/0057464 (2003-03-01), Nam
patent: 2003/0146460 (2003-08-01), Zambrano et al.
patent: 2004/0135182 (2004-07-01), An et al.
patent: 2003-0060602 (2003-07-01), None

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