Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Reexamination Certificate
2006-06-06
2006-06-06
Thomas, Eric W. (Department: 2831)
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
C361S313000
Reexamination Certificate
active
07057877
ABSTRACT:
A capacitor includes a first electrode and a second electrode, and a dielectric layer sandwiched between the first electrode and the second electrode, wherein the dielectric layer includes Pb(ZrxTiyM2)O3(where M is at least one material selected from Nb, Ta, and V, and x+y+z=1).
REFERENCES:
patent: 4266265 (1981-05-01), Maher
patent: 5736449 (1998-04-01), Miki et al.
patent: 5798903 (1998-08-01), Dhote et al.
patent: 2003/0038311 (2003-02-01), Basceri
patent: 2004/0214352 (2004-10-01), Kijima et al.
patent: 2004/0229384 (2004-11-01), Kijima et al.
patent: 2004/0232458 (2004-11-01), Natori et al.
patent: 2004/0245492 (2004-12-01), Hamada et al.
patent: 2005/0017346 (2005-01-01), Yamagata
patent: 2005/0068822 (2005-03-01), Kijima et al.
patent: 5-47587 (1993-02-01), None
patent: 5-82801 (1993-04-01), None
patent: 7-226485 (1995-08-01), None
patent: 9-139480 (1997-05-01), None
“Piezoelectric Properties of PZT: Influence of (Zr/Ti) Ratio and Niobium Substitution”, Haccart et al., Ferroelectrics 2001, vol. 254 pp. 185-195.
“Ferroelectric and Piezoelectric Properties of Nb Doped PZT films”, Haccart et al., Integrated Ferroelectrics, 2001, vol. 35, pp. 239-248.
“Properties of ferroelectric capacitor YBa2Cu3O7 /Pb(Ta0.05Zr0.48Ti0.47)O3 /YBCO/Pt/TiO2/SiO2/Si” Li et al, Journal of Nanjing University, 2001, vol. 37, No. 5, pp. 619-624.
“Direct-Write Fabrication of Pb(Nb, Zr, Ti,)O3 Devices: Influence of Paste Rheology on Print Morphology and Component Properties” Morissette et al., J. Am. Ceram. Soc., 2001, vol. 84 No. 11, pp. 2462-2468.
Hamada Yasuaki
Iwashita Setsuya
Kijima Takeshi
Noguchi Motohisa
Seiko Epson Corporation
Thomas Eric W.
LandOfFree
Capacitor, method of manufacture thereof and semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitor, method of manufacture thereof and semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor, method of manufacture thereof and semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3626163