Capacitor memory and methods for reading, writing, and fabricati

Details Capacitor memory and methods for reading, writing, and fabricati Capacitor memory and methods for reading, writing, and fabricati

1979-02-01

1980-12-30

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Signals

357 23, 365149, G11C 700, G11C 1124

Patent

active

042427363

ABSTRACT:
An improved metal dual insulator semiconductor capacitor memory is disclosed. The memory contains a plurality of capacitor cells, each cell comprising a semiconductor substrate layer and a high conductivity layer sandwiching two insulator layers. The substrate is doped to provide avalanche breakdown in a surface depletion layer at a voltage comparable to the write voltage in the accumulation direction. The invention also provides a method of reading stored information without disturbing adjacent cells. A small variable voltage is applied across a "flat-band" portion of the hysteresis loop describing the voltage-capacitance relationship for the capacitor memory. A change or the absence of a change in the current through the capacitor indicates the state of the capacitor cell. Methods to fabricate the memory are also disclosed.

REFERENCES:
patent: 3859642 (1975-01-01), Mar
patent: 4068217 (1978-01-01), Arnett et al.
patent: 4127900 (1978-11-01), Raffel et al.

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