Capacitor, integrated circuitry, diffusion barriers, and method

Details Capacitor, integrated circuitry, diffusion barriers, and method Capacitor, integrated circuitry, diffusion barriers, and method

1998-05-15

1999-10-26

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438250, 438253, 438393, 438396, 438643, 438680, H01L 21285, H01L 21443

Patent

active

059727918

ABSTRACT:
A capacitor having a pair of conductive electrodes separated by a dielectric layer and wherein at least one of the electrodes comprise Ti.sub.x Al.sub.1-x N, and wherein the variable "x" lies in a range of about 0.4 to about 0.8. The invention also contemplates a method for forming an electrically conductive diffusion barrier on a silicon substrate and which comprises providing a chemical vapor deposition reactor having a chamber; positioning the silicon substrate in the chemical vapor deposition reactor chamber; providing a source of gaseous titanium aluminum and nitrogen to the chemical vapor deposition reactor chamber; and providing temperature and pressure conditions in the chemical vapor deposition reactor chamber effective to deposit an electrically conductive diffusion barrier layer on the silicon substrate comprising Ti.sub.x Al.sub.1-x N, and wherein the variable "x" is in a range of about 0.4 to about 0.8.

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patent: 5793057 (1998-08-01), Summerfelt

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