Capacitor in a semiconductor integrated circuit and non-volatile

Details Capacitor in a semiconductor integrated circuit and non-volatile Capacitor in a semiconductor integrated circuit and non-volatile

1992-04-30

1993-02-23

Griffin, Donald A.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

365145, 361313, H01G 406, H01L 2702, G11C 1122

Patent

active

051895943

ABSTRACT:
A capacitor used in a semiconductor integrated circuit, in which lower electrode 31, a ferroelectric film 33, and an upper electrode in the form of a comb are formed on the source region 13a of a field-effect transistor 10 in the stated order, to form a ferroelectric capacitor which is apparently made of a plurality of capacitors small in area which are connected in parallel to one another. Thereby, the capacitor for a semiconductor integrated circuit can store a sufficient amount of signal charge, and is short in switching time.

REFERENCES:
patent: 3737805 (1973-06-01), Shimodaira et al.
patent: 5043781 (1991-08-01), Nishiura et al.
patent: 5046043 (1991-09-01), Miller et al.
patent: 5109357 (1992-04-01), Eaton
patent: 5121353 (1992-06-01), Natori
patent: 5136534 (1992-08-01), McDavid et al.

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