Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-17
2009-08-18
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S309000, C257SE27094
Reexamination Certificate
active
07576383
ABSTRACT:
A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node.
REFERENCES:
patent: 6664584 (2003-12-01), Yang et al.
patent: 7300841 (2007-11-01), Park
patent: 2006/0263971 (2006-11-01), Lee et al.
patent: 1020050066189 (2005-06-01), None
Cho Ho Jin
Kim Jae Soo
Lee Dong Kyun
Park Cheol Hwan
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Mandala Victor A
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