Capacitor having tantalum oxynitride film and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S306000, C257S308000, C257S309000, C257S310000

Reexamination Certificate

active

07038265

ABSTRACT:
A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.

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Fazan, P. C., et al., “A High-C Capacitor (20.4 fF/um2) with Ultrathin CVD—Ta2O5 Films Deposited on Rugged Poly-Si for High Density DRAMs”,Int'l Electron Devices Meeting: Technical Digest,San Francisco, CA,(Dec. 1992),263-266.
Fazan, P. C., et al., “Ultrathin Ta2O5 Films on Rapid Thermal Nitrided Rugged Polysilicon for High Density DRAMs”,Extended Abstracts: Int'l Conference on Solid State Devices and Materials,Tsukuba,(Aug. 1992),697-698.
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