Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-08
2005-03-08
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S308000, C257S309000, C257S310000
Reexamination Certificate
active
06864527
ABSTRACT:
A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.
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Al-Shareef Husam N.
DeBoer Scott Jeffrey
Gealy Dan
Thakur Randhir P. S.
Schwegman Lundberg Woessner & Kluth P.A.
Tran Minhloan
Tran Tan
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