Capacitor for use in DRAM cell using surface oxidized silicon no

Details Capacitor for use in DRAM cell using surface oxidized silicon no Capacitor for use in DRAM cell using surface oxidized silicon no

1994-03-18

1996-04-30

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257534, H01L 2704, H01L 27108

Patent

active

055127681

ABSTRACT:
A MOST capacitor structure in accordance with the invention is formed by using surface oxidized silicon nodules after metal etching to define polysilicon pillars with annular cross sections and with diameters of 0.05 to 0.2 microns.

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