Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-14
2006-11-14
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S307000, C257S311000, C257S758000
Reexamination Certificate
active
07135733
ABSTRACT:
The present invention provides a capacitor for use in a semiconductor device having a damascene interconnect structure, such as a dual damascene interconnect, formed over a substrate of a semiconductor wafer. In one particularly advantageous embodiment, the capacitor, comprises a first capacitor electrode, such as copper, comprised of a portion of the damascene interconnect structure, an insulator layer formed on the damascene interconnect structure wherein the insulator layer is a passivation layer, such as silicon nitride. The passivation layer may be an outermost or final passivation layer, or it may be an interlevel passivation layer. The capacitor further includes a second capacitor electrode comprised of a conductive layer, such as aluminum, that is formed on at least a portion of the insulator layer.
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Downey Stephen
Harris Edward
Merchant Sailesh
Agere Systems Inc.
Fenty Jesse A.
Jackson Jerome
LandOfFree
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