Capacitor for DRAM cell

Details Capacitor for DRAM cell Capacitor for DRAM cell

1991-05-07

1993-03-23

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257528, 257538, H01L 2968

Patent

active

051969092

ABSTRACT:
A capacitor suitable for use with a DRAM memory cell is composed of multiple layers of polycrystalline silicon. The storage node is formed from a polycrystalline silicon layer sandwiched between two polysilicon ground plate layers. Such a structure nearly doubles the capacitance for a given chip surface area used. First the bottom polycrystalline silicon plate layer is fabricated, followed by an isolation step and fabrication of the storage node polycrystalline silicon layer. Following another isolation step, the polycrystalline silicon top plate layer is then formed and connected to the bottom plate layer.

REFERENCES:
patent: 4899203 (1990-02-01), Ino
patent: 4922312 (1990-05-01), Coleman et al.
patent: 4949154 (1990-08-01), Haken
patent: 4953126 (1990-08-01), Ema
patent: 5006481 (1991-04-01), Chan et al.

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