Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2005-11-23
2008-11-18
Hoang, Quoc D (Department: 2892)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S253000, C257S306000, C257SE21010, C257SE21021, C257SE21648
Reexamination Certificate
active
07452783
ABSTRACT:
In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.
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Cho Young-Joo
Kim Jung-Wook
Kim Rak-Hwan
Lee Hyun-Suk
Lim Hyun-Seok
Hoang Quoc D
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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